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| savantic semiconductor product specification silicon pnp power transistors bd176 bd178 BD180 d escription with to-126 package complement to type bd175 /177 /179 applications for medium power linear and switching applications pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings (ta=25 ) symbol parameter conditions value unit bd176 -45 bd178 -60 v cbo collector-base voltage BD180 open emitter -80 v bd176 -45 bd178 -60 v ceo collector-emitter voltage BD180 open base -80 v v ebo emitter -base voltage open collector -5 v i c collector current (dc) -3 a i cm collector current-peak -7 a p c collector power dissipation t c =25 30 w t j junction temperature 150 t stg storage temperature -65~150
savantic semiconductor product specification 2 silicon pnp power transistors bd176 bd178 BD180 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v cesat collector-emitter saturation voltage i c =-1a; i b =-0.1a -0.8 v v be base-emitter on voltage i c =-1a ; v ce =-2v -1.3 v bd176 -45 bd178 -60 v ceo(sus) collector-emitter sustaining voltage BD180 i c =-0.1a; i b =0 -80 v bd176 v cb =-45v; i e =0 bd178 v cb =-60v; i e =0 i cbo collector cut-off current BD180 v cb =-80v; i e =0 -100 a i ebo emitter cut-off current v eb =-5v; i c =0 -1 ma h fe-1 dc current gain i c =-150ma ; v ce =-2v 40 250 h fe-2 dc current gain i c =-1a ; v ce =-2v 15 f t transition frequency i c =-250ma; v ce =-10v 3 mhz h fe-1 classifications 6 10 16 40-100 63-160 100-250 classification 16 :only bd176 savantic semiconductor product specification 3 silicon pnp power transistors bd176 bd178 BD180 package outline fig.2 outline dimensions |
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